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| 2SD2674 Transistors General purpose amplification (12V, 1.5A) 2SD2674 !Application Low frequency amplifier !External dimensions (Units : mm) Each lead has 0.4 same dimensions 0.85 0.7 !Features 1) A collector current is large. 2) Collector saturation voltage is low. < VCE(sat) = 200mV at IC = 500mA / I B = 25mA (3) 1.6 0~0.1 0.3~0.6. ROHM : TSMT3 !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Single pulse, PW=1ms !Packaging specifications Unit V V V A A mW C C 2.8 (2) (1) 0.95 0.95 1.9 2.9 0.16 Abbreviated symbol : ES (1) Emitter (2) Base (3) Collector Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 15 12 6 1.5 3 500 150 -55~+150 Package Type Code Basic ordering unit (pieces) 2SD2674 Taping TL 3000 !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Pulsed Symbol Min. BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob 15 12 6 - - - 270 - - Typ. Max. Unit - - - - - 85 - 400 12 - - - 100 100 200 680 - - V V V nA nA mV - pF IC=10A IC=1mA IE=10A VCB=15V VEB=6V Conditions IC/IB=500mA/25mA VCE/IC=2V/200mA VCB=10V, IE=0A, f=1MHz MHz VCE=2V, IE=-200mA, f=100MHz 1/2 2SD2674 Transistors !Electrical characteristic curves BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Ta=100C Ta=-40C Ta=25C Ta=100C IC/IB=20/1 IC/IB=20 Pulsed VBE(sat) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 10 1 Ta=25C VCE=2V DC CURRENT GAIN : hFE 1 Ta=25C Ta=-40C 0.1 100 0.1 Ta=100C Ta=25C Ta=-40C IC/IB=50/1 VCE(sat) 0.01 0.01 IC/IB=20/1 IC/IB=10/1 10 0.001 VCE=2V Pulsed 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current 10 COLLECTOR CURRENT : IC (A) 1 TRANSITION FREQUENCY : fT (MHz) VCE=2V Pulsed 1000 1000 Ta=25C VCE=2V f=100MHz SWITCHING TIME : (ns) 100 tstg Ta=100C 0.1 Ta=25C 100 10 tdon tf tr 0.01 Ta=-40C 0.001 0 0.5 1.0 1.5 10 -0.001 VCE=2V Ta=25C Pulsed -0.01 -0.1 -1 -10 1 0.01 0.1 1 10 BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.4 Grounded emitter propagation characteristics Fig.5 Gain bandwidth product vs. emitter current Fig.6 Switching time EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 100 Cib IE=0A f=1MHz Ta=25C Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 2/2 |
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